Effect of vanadium thickness and deposition temperature on VO2 synthesis using atmospheric pressure thermal oxidation

Vanadium dioxide (VO2) is a phase transition material that undergoes reversible insulator-metal at ~ 68 ˚C. Atmospheric pressure thermal oxidation (APTO) of vanadium (V) simple VO2 synthesis method in which V thin film oxidized open air. For an optimum duration, films are obtained with good properties. We recently reported modified APTO process using step temperature profile for (Thin Solid Films 706, 138003 (2020)). demonstrated ultra-low budget electrical and optical 130 nm room-temperature RF sputtered film, duration 30 s was obtained. In this work, we study how the starting thickness deposition affects duration. varying (15-212 nm) 120 thick (~27-450 ˚C) prepared magnetron sputtering. These different durations characterized Raman four-probe measurements to find each condition. increases increase temperature. model effect on optimal time parabolic law can be used obtain times intermediate thicknesses/deposition temperatures.